/Black phosphorus-based SWIR and MWIR photodetectors and imagers

Black phosphorus-based SWIR and MWIR photodetectors and imagers

Leuven | More than two weeks ago

From SWIR to MWIR: black phosphorus unlocked potential

Introduction


In recent years, short-wave (SWIR) and mid-wave (MWIR) infrared technologies have gained traction in various fields, including healthcare, agriculture, security (such as face recognition and surveillance), automotive, machine vision, and virtual reality (VR). Among the leading technologies for SWIR detection are photodetectors based on quantum-dot (QD) thin films, valued for their cost-effective, high-resolution performance and tunability to specific wavelengths. However, these QDs often contain lead or other heavy metals, which pose significant health risks. As a result, developing heavy metal-free alternatives for SWIR or MWIR  sensors is crucial to addressing these concerns and advancing efficient, tunable, and environmentally friendly imaging technologies.


Additionally, we propose the use of black phosphorus (bP) as the active layer for this new generation devices. As a layered material, bP allows precise thickness control from monolayer to bulk. Its high mobility and clean interfaces can lead to faster device performance compared to current QD-based technologies.

Topic

The goal of this PhD is to explore and develop black phosphorus-based thin absorbers for SWIR and MWIR wavelengths and integrate them in imec state-of-the-art imagers.

Layered bP thin films will be produced via chemical exfoliation or ink process, with their thickness determined by the material's optical properties, as the bP bandgap is tunable by the number of layers.  The photodiode stack and configuration will be determined based on electrical and optical simulations. Student will learn to fabricate and characterize the devices and feedback will be used to optimize their performance. Electrical stability will be evaluated on regular basis. Finally, the photodiode stack will be integrated within imec imager platform for state-of-the-art SWIR and MWIR imagers.

The Candidate
  • You are a highly motivated recent graduate with a master’s degree in nano-engineering, material science, physics, chemistry, electrical engineering, or a related field. 
  • You have a keen interest in the development and processing of thin-film semiconductors. Your expertise includes device fabrication as well as the electrical and optical characterization of both films and devices. Experience on 2D/layered materials is a plus.
  • You will be expected to work safely in a cleanroom environment while acquiring advanced processing and laboratory skills. Regular presentation of results will be a key part of your role.
  • As a team player with strong communication skills, you will collaborate within a multidisciplinary and multicultural team across several imec departments. 
  • Given imec's international environment, an excellent command of English is essential. 





Required background: Nano-engineering, materials science, chemistry, physics, electrical engineering

Type of work: 10% literature study, 20% design/modeling, 40% processing, 30% characterization

Supervisor: Jan Genoe

Daily advisor: Isabel Pintor Monroy, Sai Gourang Patnaik

The reference code for this position is 2025-112. Mention this reference code on your application form.

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