As 3D-stacked high-bandwidth memory (HBM) technologies become critical for modern AI and HPC systems, understanding system‑level implications of device, technology, and architectural choices is essential. This internship focuses on developing a Design‑Technology Co‑Optimization (DTCO) and System‑Technology Co‑Optimization (STCO) evaluation framework for next‑generation 3D HBM solutions. The framework will integrate models spanning bit‑cell/device characteristics, array organization, 3D stacking, and multi‑channel memory subsystem behavior. The student will analyze how technology choices propagate to system‑level performance, bandwidth scaling, energy efficiency, and area constraints. The resulting framework will enable early‑stage trade‑off studies to guide future memory roadmaps.
- Solid understanding of memory subsystem
- Familiarity with different bit cell concepts
- Strong programming skills in C++ or Python
- Experience with performance modelling techniques
- Exposure to system-level simulation tools or benchmarking frameworks is a plus (Ramulator, DRAMSys, DRAMSim, Gem5, …)
- resume
- motivation
- current study
Incomplete applications will not be considered.