Leuven | More than two weeks ago
Gallium nitride high electron mobility transistors (GaN HEMTs) offer a compelling combination of high-frequency operation, power handling capability, and energy efficiency making them a preferred choice for a wide range of RF and millimeter wave applications where circuit performance, size, and power efficiency are critical factors. One key application is power amplifiers for 5G and 6G wireless communications where GaN HEMTs can make a crucial difference in reducing the form factor and power consumption. However, HEMT requirements strongly differ across wireless frequency bands. For instance, the design can be orientated towards sub-20 GHz operation at higher power, or it can be for ³28 GHz operation at relatively lower power per device. Addressing this spectrum of requirements necessitates innovations in material stack and device architectures.
Furthermore, integration of GaN HEMTs on silicon (Si) substrates is desired to enable cost-effective, scalable, and sustainable solutions for 5G and beyond wireless applications. Therefore, imec is researching on developing GaN HEMTs on Si platform which can rival their GaN-on-SiC counterparts in terms of performance and reliability.
The goal of this PhD is to develop high gain, linear, and reliable GaN HEMTs on Si substrate for 5G and 6G power amplifiers. During this PhD, you will research on:
Required background: Master’s degree in electrical engineering, material science, or equivalent. In-depth understanding of semiconductor device physics. Familiarity with fabrication and characterization techniques. Ability to work in a cross-functional team and collaborate.
Type of work: Your day-to-day work will be focused around: (i) GaN device design and physical modeling. (ii) Device characterization and data analysis.
Supervisor: Bertrand Parvais
Daily advisor: Sachin Yadav
The reference code for this position is 2025-031. Mention this reference code on your application form.