Hybrid Bonding with Alternative Metals
Leuven | More than two weeks ago
We are looking for a motivated PhD candidate to join our research team and contribute to the advancement of hybrid bonding technology to enable the next-generation semiconductor devices.
Low-distortion dielectric bonding has already become an established solution in front-end-of-line (FEOL) processing. However, as device dimensions continue to shrink and novel architectures such as complementary FETs (CFETs) emerge, hybrid bonding is gaining increasing relevance even within FEOL integration schemes. In this context, the limitations of copper (Cu) as the standard interconnect material become apparent. Shrinking interconnect pitches and compatibility constraints necessitate the exploration of alternative metals that can meet the stringent requirements of future semiconductor nodes.
Your role
As a PhD candidate, you will play a central role in shaping this research, with responsibilities including:
Identifying and screening promising alternative metals for hybrid bonding.
Characterizing their physical (e.g. grain structure), chemical, and electrical properties at the nanoscale.
Designing and performing experimental bonding studies to evaluate integration feasibility.
Developing a fundamental understanding of the mechanisms that govern bonding with these metals.
Collaborating with experts in materials science, process integration, and semiconductor technology.
Impact
This research will directly contribute to overcoming critical bottlenecks in advanced semiconductor manufacturing. By enabling new interconnect materials and bonding strategies, you will help to pave the way toward more reliable, energy-efficient, and scalable integration schemes.
Required background: engineering/physics/chemistry
Type of work: 60% experimental 30% data analysis 10% literature
Supervisor: Stefan De Gendt
Daily advisor: Serena Iacovo
The reference code for this position is 2026-140. Mention this reference code on your application form.