Leuven | More than two weeks ago
Proposed Outline of the Dissertation:
Spin-Orbit Torque Magnetic Random-Access Memory (SOT-MRAM) is emerging as a promising candidate for future memory technologies due to its non-volatility, high speed, and low power consumption. This PhD research aims to design and optimize SOT-MRAM circuits focusing on area, latency, and power. The study will involve the design and testing of a test chip for SOT-MRAM macros in various configurations, including baseline 2T1R, 1S1T1R, and multipillar configurations.
The dissertation will cover the following key areas:
Required background: Electronic Engineering
Type of work: 20% literature research, 50% circuit design, 20% testing, 10% dissemination
Supervisor: Wim Dehaene
Daily advisor: Fernando Garcia Redondo
The reference code for this position is 2025-073. Mention this reference code on your application form.