Leuven | More than two weeks ago
New materials come along with new challenges in developing nanofabrication methods. So far, the most prominent one for the 3d-MAs is their anisotropic etching: preferably removing some materials in a vertical direction. Etching directionality is a mandatory requirement for developing devices in 3D, as it allows the different structure composing the devices to be placed closer each from the others (contrary to isotropic etching). Conventional anisotropic (dry) etching process mainly relies on halogen-based plasma (F, Cl, Br), but 3d-MAs are not volatile in the temperature range acceptable for CMOS devices when reacting with halogens alone. That is why the development of new etching processes is needed, to enable gains in computing performance.
Exploring a different chemical removal pathway is necessary, enabling removal at nanoscale, low temperature and halogen-free (more environmentally friendly). These requirements translate into the need for a cyclic process called atomic layer etching (ALE) forming volatile organo-metallic compounds. The ALE is composed of two main steps, described as: a first surface preparation step (increase of oxidation level of the outer metallic layer), followed by a second removal step, where organic molecules attach to the surface, forming stable organo-metallic bonds. Ultimately, volatile organo-metallic molecules are formed, which can desorb under small energy input (thermal, chemical or kinetic) leading to desorption and etching.Required background: Master in chemistry, master in physics
Type of work: 50% experimental, 30% data analysis and interpretation, 20% literature
Supervisor: Stefan De Gendt
Co-supervisor: Jean-Francois de Marneffe
Daily advisor: Jean-Francois de Marneffe, Dennis van Dorp, Alexis Franquet
The reference code for this position is 2025-055. Mention this reference code on your application form.