Leuven | More than two weeks ago
Spin-transfer torque magnetic random access memory (STT-MRAM) and spin-orbit torque MRAM (SOT-MRAM) are emerging non-volatile memory technologies that promise high density, low power consumption, and fast access times. However, data loss or erroneous operation due to accidental or deliberate exposure to magnetic fields can reduce the reliability and lifetime of the memory. Magnetic immunity, which refers to the ability of a memory device to maintain its magnetic state in the presence of external magnetic fields, is therefore a critical aspect of MRAM design and operation.
In this PhD, the student will investigate magnetic immunity in MRAM, understand the physical parameters determining the behavior under various magnetic field disturbances and propose strategies to enhance the magnetic immunity. Following an initial phase of exploration, the student is encouraged to focus primarily on one technology, either STT or SOT-MRAM.
The thesis work will involve following tasks:
This PhD allows the student to not only learn the physics behind STT-MRAM and SOT-MRAM, but also to evaluate with experiments/modeling what happens under external magnetic fields. The student will be closely guided by a team of MRAM experts. The outcome of this project can lead to further development and optimization of the STT-MRAM and SOT-MRAM technology.
Required background: Electrical Engineering, Physics
Type of work: literature study (10%), experimental work (50%), modelling (40%)
Supervisor: Bart Soree
Daily advisor: Simon Van Beek
The reference code for this position is 2025-065. Mention this reference code on your application form.