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Upscaling semiconducting and superconducting qubits with customized 300mm CMOS-compatible fabrication processes in the advanced pilot lines of imec

Research update

Scaling up the number of quantum bits (qubits) is one of the major hurdles in quantum computing, requiring improvements in quality and yield of the qubitsTwo imec papers demonstrate for the first time an industry-scale fabrication process for both semiconducting and superconducting qubits –achieving high reproducibility, low noise, and high yield.The Si-quantum dot-based qubits display record-low charge noise levels, a critical parameter to maintain quantum coherence and obtain high-fidelity control of the qubits – both key metrics.The papers were published in NPJ Quantum Information and Nature.

Taking a quantum leap from lab to fab

New partnership enables innovative network to strengthen digital sovereignty in Europe.

Jade Liu

New partnership enables an innovative network together with academia and industry partners to strengthen digital sovereignty in Europe

Baden-Württemberg attracts imec to lead development of chiplet-based technology for automotive applications 

Technology could revolutionize driver assistance systems and other high-precision sensing applications.

photonic code-division multiplexing FMCW 144GHz distributed radar

Technology could revolutionize next-generation driver assistance systems and other high-precision sensing applications&nbsp;

Imec pioneers photonic code-division multiplexing FMCW 144GHz distributed radar

Attilio Belmonte

Gouri Sankar Kar

2T0C IGZO-based DRAM opens doors to high-density 3D DRAM and embedded DRAM

Technology review

Traditional DRAM technology, with memory bit cells consisting of one silicon transistor and one capacitor, faces major scaling challenges.A new DRAM bit cell without a capacitor and with two thin-film transistors – each having an oxide semiconductor channel such as indium-gallium-zinc-oxide (IGZO) – shows promises for continuing the DRAM technology roadmap, clearing the way for high-density 3D DRAM and embedded DRAM.

Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

A mobile device to identify and characterize different stages of cardiovascular diseases.

InSiDe: cardiovascular diagnosis using laser Doppler vibrometry

InSiDe, a European R&D project targeting mobile early-stage cardiovascular disease diagnosis - using Laser Doppler Vibrometry

Extending existing strategic partnership until 2029.

Imec and ZEISS sign new Strategic Partnership Agreement

Imec and ZEISS intensify collaboration with the signing of a new Strategic Partnership Agreement

Recognizing Srouji’s pivotal role in shaping Apple’s technology roadmap

Imec honors Apple’s Johny Srouji with the 2025 Innovation Award 

Charlotte D'Hulst

Imminent bioconvergent tools and AI will decode the black box of biology

Vision

The breakthroughs of large language models were made possible by converging massive computational power with large databases.If we could train a similar AI model on biology, we would be able to enhance our understanding of diseases and engineer superior therapeutics.However, this requires complex, rich, and thus far inaccessible datasets.

Can we build a chatGPT for human biology?

A long-term collaboration to jointly contribute to European Digital Sovereignty. 

Openchip and imec sign strategic MoU to advance AI technologies

Pieter Van Nuffel

 Openchip and imec Sign Strategic MoU to Advance AI Technologies

Barry O’Sullivan

A study on charge trapping and emission

Longread

This article focuses on the reliability of GaN-on-Si MOS-HEMTs for mm-wave power amplifiers, particularly in the context of 5G technologyWe have identified charge trapping and emission in HEMT structures with high-κ dielectrics, which impact the performance and reliability of these devices.The study highlights the differences in charge trapping behavior between HfO₂ and Al₂O₃ dielectrics, with HfO₂ showing more persistent threshold voltage shifts.The findings are significant for optimizing material combinations and layer thickness choices in high-frequency, high-power devices.

DC Reliability of high-κ GaN-on-Si MOS-HEMTs for mm-Wave Power Amplifiers 

Supporting semiconductor research and sustainable innovation in Europe.

ASML and imec sign strategic partnership agreement 

Marc Assink

Sarah de Crescenzo

Karen Lo

Jim Kavanagh

Pete Convertito

Peter Cheang

ASML and imec sign strategic partnership agreement to support semiconductor research and sustainable innovation in Europe  

Alessio Spessot

Naoto Horiguchi

Imec proposes different material and integration options in response to the evolving needs of the DRAM periphery.&nbsp;

Featured in the media

A technology platform for thermally stable DRAM peripheral transistors

A milestone in validating the High NA EUV patterning ecosystem

Electrical yield for 20nm pitch metal lines obtained with High NA EUV single patterning

First electrical tests at 20nm pitch present a next milestone in validating the High NA extreme ultraviolet (EUV) patterning ecosystem

Stories

Taking a quantum leap from lab to fab

Baden-Württemberg attracts imec to lead development of chiplet-based technology for automotive applications

Imec pioneers photonic code-division multiplexing FMCW 144GHz distributed radar

Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

InSiDe, a European R&D project targeting mobile early-stage cardiovascular disease diagnosis - using Laser Doppler Vibrometry

Imec and ZEISS intensify collaboration with the signing of a new Strategic Partnership Agreement

Imec honors Apple’s Johny Srouji with the 2025 Innovation Award

Can we build a chatGPT for human biology?

Openchip and imec Sign Strategic MoU to Advance AI Technologies

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