At the scale of today’s nanoelectronics, the smallest details can define the performance of an entire device. A missing bond, an interface defect, or the way atoms arrange themselves in a material stack can influence whether a future transistor or memory technology delivers on its promise.
That is the world in which Geoffrey Pourtois works. As an imec fellow and research lead in material simulation and physics, Geoffrey uses atomistic simulations to understand the relationship between materials, interfaces, defects, and electrical device performance. His work helps imec teams identify new materials, understand complex interfaces, and guide technology choices long before every option can be tested experimentally.
Understanding materials atom by atom
Geoffrey joined imec in 2003, shortly after obtaining his PhD in Chemistry from the University of Mons, Belgium. Since then, he has worked at the intersection of chemistry, physics, materials science, and semiconductor technology.
When Geoffrey started at imec, his first assignments focused on strained silicon and high-k dielectric materials. The challenge was to understand how new materials could improve transistor performance while reducing leakage current. It quickly became clear that interfaces were playing a decisive role, and that atomistic simulations could provide valuable insight into the mechanisms behind degradation and device performance.
He mainly focuses on atomistic modeling; using simulations to describe how atoms interact and how these interactions shape material properties. This understanding is particularly critical for semiconductor devices. As transistors and memories continue to shrink, their performance is increasingly determined by processes occurring at interfaces only a few atoms thick.
“We use atomistic simulations to understand how material properties, missing bonds, and morphology impact device performance, and how we can engineer them to make devices better,” Geoffrey explains.
Guiding new materials development
Geoffrey leads imec’s material simulation and physics group, focusing on atomistic simulations of nanoelectronic materials and complex gate stacks.
His work has supported a broad range of imec research directions, including the identification of novel metal and dielectric materials for interconnects and memories, the study of 2D materials, the development of transistor doping strategies, CMOS metal gate work-function engineering, the exploration of amorphous semiconductors and the fundamental understanding of photoresist degradation mechanisms. He has also contributed to the discovery of materials with emerging functionalities, including ovonic threshold switching or electro-optic properties.
His team does not work on one isolated material question. Instead, they provide insights that can influence decisions across multiple programs; helping researchers understand which materials are promising, which defects matter, and which interfaces need further engineering.
Today, they offer roadmapping support and a fundamental understanding of material- and interface-related questions across a large part of imec’s research portfolio. “Geoffrey’s impact is felt across multiple programs and activities, as the insights from his simulations impact development in semiconducting oxides, binary metals, and ferroelectric materials,” says Steven Scheer, senior VP R&D.
Simulations as a catalyst for innovation
Atomistic simulations are powerful, but they are also computationally demanding. Studying complex material interfaces or screening large numbers of material candidates requires advanced software, data storage, and high-performance computing infrastructure. For Geoffrey, however, this computational challenge makes simulation a powerful catalyst for innovation. It allows researchers to explore fundamental material behavior, reduce uncertainty, and direct experimental efforts toward the most promising directions.
But technical depth is only part of good research. If you ask Geoffrey, progress also depends on the ability to share your passion with others. “If you can explain things in detail, but also share your passion, people will start resonating with you. They will connect, exchange ideas, and help you move forward. That combination of passion and teamwork is something I cherish a lot.”
His own way of solving problems is not always linear. Geoffrey likes to keep many projects moving at the same time. When he runs out of steam on one problem, he switches to another or goes for a long jog. “When I don’t focus on the problem anymore, I suddenly get inspired on how to solve it.”

Geoffrey Pourtois is an imec fellow working in atomistic modeling and material simulation for nanoelectronics. Since joining imec in 2003, he has focused on the relationship between materials, interface defects, and electrical device performance. He received his PhD in Chemistry from the University of Mons (Belgium) in 2002 and was appointed imec fellow in 2020.
His work supports new materials development across multiple imec programs, including semiconducting oxides, binary metals, ferroelectric materials, advanced gate stacks, interconnects, memories, and transistor technologies.
Expertise
- Atomistic material simulation
- Nanoelectronic materials and interfaces
- Defect physics and device performance
- Advanced gate stacks and emerging memory materials
Career highlights
- Joined imec in 2003 and has led work in material simulation and physics for nanoelectronic materials
- Became team lead of imec’s modeling, simulation and physics activities in 2007
- Appointed imec fellow in 2020
- Built simulation expertise that supports multiple imec programs, including work on semiconducting oxides, binary metals, and ferroelectric materials
- Helped identify and evaluate new material candidates for interconnects, memories, transistors, and advanced CMOS technologies
Published on:
14 August 2026










